Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission
- 19 May 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (20) , 3400-3402
- https://doi.org/10.1063/1.1576511
Abstract
The effects of nitrogen fraction on the temperature dependence of GaN x As 1−x / GaAs (x150 K ) where the emission has a linear dependence, a strong reduction in emission temperature dependence was observed with increasing nitrogen. The temperature dependence was modeled using the band anticrossing approach, with the interaction matrix element parameter C NM (V MN =−C MN x ) and the nitrogen level parameter γ (E N =E N 0 −γx) used as fitting parameters.Keywords
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