Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys
- 19 October 1999
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 112 (8) , 443-447
- https://doi.org/10.1016/s0038-1098(99)00361-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Band Anticrossing in GaInNAs AlloysPhysical Review Letters, 1999
- Gas-source MBE of GaInNAs for long-wavelength laser diodesJournal of Crystal Growth, 1998
- GULP: A computer program for the symmetry-adapted simulation of solidsJournal of the Chemical Society, Faraday Transactions, 1997
- Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN AlloysPhysical Review Letters, 1996
- Quasiparticle excitations in and ordered alloysPhysical Review B, 1995
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and BoronJapanese Journal of Applied Physics, 1993
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992
- Nitrogen pair luminescence in GaAsApplied Physics Letters, 1990
- Predictions of Deep-Impurity-Level Energies in SemiconductorsPublished by Elsevier ,1984
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983