Dual-transistor method to determine threshold-voltage shifts due to oxide-trapped charge and interface traps in metal-oxide-semiconductor devices
- 31 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5) , 466-468
- https://doi.org/10.1063/1.101854
Abstract
A new technique is proposed to evaluate the radiation response of metal-oxide-semiconductor (MOS) transistors. The method requires that otherwise identical n- and p-channel transistors be irradiated under the same conditions. Using assumptions similar to those of widely accepted ‘‘single-transistor’’ methods, standard threshold-voltage and mobility measurements are combined to accurately estimate threshold-voltage shifts due to oxide-trapped charge and interface traps. This approach is verified for several MOS processes. The dual-transistor method can be applied to devices with much larger parasitic leakage, and at shorter times following a radiation pulse, than subthreshold current or charge-pumping techniques.Keywords
This publication has 10 references indexed in Scilit:
- Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environmentsIEEE Transactions on Nuclear Science, 1988
- A Programmable Test System for Transient Annealing Characterization of Irradiated MOSFETsIEEE Transactions on Nuclear Science, 1987
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986
- Correlation of Radiation Effects in Transistors and Integrated CircuitsIEEE Transactions on Nuclear Science, 1985
- A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device CharacteristicsIEEE Transactions on Nuclear Science, 1984
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Mosfet and MOS Capacitor Responses to Ionizing RadiationIEEE Transactions on Nuclear Science, 1984
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980