A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-f/sub T/ SiGe-bipolar
- 1 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A fully integrated rf power amplifier for 7-18 GHz-f/sub T/ with no external components was realized in a 75GHz-f/sub T/, 0.35/spl mu/m-SiGe-BiCMOS technology. At 17.2GHz the push-pull amplifier with integrated output balun delivers 12dBm, 17.5 dBm at 1.2V, 2.4V.Keywords
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