Monolithic transformers for silicon RF IC design
Top Cited Papers
- 1 September 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 35 (9) , 1368-1382
- https://doi.org/10.1109/4.868049
Abstract
A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented. Two types of transformer construction are considered in detail, and the characteristics of two-port (1:1 and 1:n turns ratio) and multiport transformers (i.e., baluns) are presented from both computer simulation and experimental measurements. The effects of parasitics and imperfect coupling between transformer windings are outlined from the circuit point of view. Resonant tuning is shown to reduce the losses between input and output at the expense of operating bandwidth. A procedure for estimating the size of a monolithic transformer to meet a given specification is outlined, and circuit examples are used to illustrate the applications of the monolithic transformer in RF ICs.Keywords
This publication has 24 references indexed in Scilit:
- A 5.1-5.8 GHz low-power image-reject downconverter in SiGe technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A monolithic 3.7 W silicon power amplifier with 59% PAE at 0.9 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- RF analog and digital circuits in SiGe technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic transformers for silicon RF IC designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Silicon bipolar VCO family for 1.1 to 2.2 GHz with fully-integrated tank and tuning circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic transformers and their application in a differential CMOS RF low-noise amplifierIEEE Journal of Solid-State Circuits, 1998
- RF circuit design aspects of spiral inductors on siliconIEEE Journal of Solid-State Circuits, 1998
- A fully integrated VCO at 2 GHzIEEE Journal of Solid-State Circuits, 1998
- Design of Planar Rectangular Microelectronic InductorsIEEE Transactions on Parts, Hybrids, and Packaging, 1974
- A precise four-quadrant multiplier with subnanosecond responseIEEE Journal of Solid-State Circuits, 1968