Vanadium in GaAs: For a revision of the energy level scheme
- 30 June 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 62 (11) , 753-755
- https://doi.org/10.1016/0038-1098(87)90041-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The donor level of vanadium in InPJournal of Applied Physics, 1986
- The acceptor level of vanadium in III–V compoundsJournal of Applied Physics, 1985
- Optical and Electrical Properties of Vanadium‐Doped GaAsPhysica Status Solidi (b), 1985
- Identification of a vanadium-related level in liquid encapsulated Czochralski-grown GaAsApplied Physics Letters, 1985
- Growth of vanadium-doped semi-insulating GaAs by MOCVDJournal of Crystal Growth, 1984
- Heat treatment induced redistribution of vanadium in semi-insulating GaAs:VApplied Physics Letters, 1984
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983
- Deep level optical spectroscopy of the levels introduced by transition metals in GaAsPhysica B+C, 1983
- Spectroscopic study of vanadium in GaP and GaAsPhysical Review B, 1982
- Optical absorption and photoluminescence of vanadium in n-type GaAsSolid State Communications, 1980