Identification of a vanadium-related level in liquid encapsulated Czochralski-grown GaAs
- 15 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 607-609
- https://doi.org/10.1063/1.96087
Abstract
We present the first positive identification of a vanadium-related electron trap in V-doped GaAs crystals grown by the liquid encapsulated Czochralski technique in pyrolytic boron nitride crucibles. Detailed deep level transient spectroscopy and capacitance transient analysis yielded a trap energy of 0.15±0.01 eV below the conduction band and an electron capture cross section of about 2×10−14 cm2. Optical absorption and mobility data show that this level corresponds to the ionized acceptor state V2+(3d3) of substitutional vanadium. No midgap levels other than EL2 could be detected in these V-doped crystals showing that doping with vanadium plays no direct role in the compensation process in semi-insulating GaAs crystals.Keywords
This publication has 8 references indexed in Scilit:
- A universal trend in the binding energies of deep impurities in semiconductorsApplied Physics Letters, 1984
- Heat treatment induced redistribution of vanadium in semi-insulating GaAs:VApplied Physics Letters, 1984
- Deep level optical spectroscopy of the levels introduced by transition metals in GaAsPhysica B+C, 1983
- A dominant electrical defect in GaAsSolid State Communications, 1982
- Spectroscopic study of vanadium in GaP and GaAsPhysical Review B, 1982
- Point Defects in GaP, GaAs, and InPPublished by Elsevier ,1982
- Optical absorption and photoluminescence of vanadium in n-type GaAsSolid State Communications, 1980
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977