Effect of Light Irradiation on Sulfide-Treated GaAs with SiO2 Deposition
- 1 March 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (3A) , L297
- https://doi.org/10.1143/jjap.33.l297
Abstract
The degradation mechanism of sulfide-treated and SiO2 deposited GaAs has been studied. The sulfide treatment removes the oxide of GaAs and Ga-dangling bonds, and increases the intensity of photoluminescence. However, by the irradiation of UV light or Ar+ laser, the photoluminescence intensity is reduced substantially. X-ray Photoelectron Spectroscopy (XPS) analysis and C-V measurement show that the Ga–S bonds generated by the sulfide treatment become Ga-dangling bonds due to the light irradiation. We believe this is the reason why the photoluminescence intensity decreases, and therefore, it is necessary to avoid light irradiation after sulfide treatment and SiO2 deposition on GaAs in order to maintain the surface-passivation effect.Keywords
This publication has 12 references indexed in Scilit:
- Structure of S on passivated GaAs (100)Applied Physics Letters, 1993
- Electronic properties of Se-treated SiO2/GaAs interfacesApplied Physics Letters, 1992
- Improvement of catastrophic optical damage level of AlGaInP visible laser diodes by sulfur treatmentApplied Physics Letters, 1991
- Suppression of the emitter size effect on the current gain of AlGaAs/GaAs heterojunction bipolar transistor by utilizing (NH4)2Sx treatmentJournal of Applied Physics, 1991
- Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx TreatmentJapanese Journal of Applied Physics, 1989
- On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface statesThin Solid Films, 1983
- Surface donors and acceptors on GaAs and InP exposed to oxygenJournal of Vacuum Science and Technology, 1982
- Initial oxidation and oxide/semiconductor interface formation on GaAsJournal of Vacuum Science and Technology, 1979
- Electronic surface states on clean and oxygen‐exposed GaAs surfacesJournal of Vacuum Science and Technology, 1976
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962