Structure of S on passivated GaAs (100)
- 7 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (23) , 2932-2934
- https://doi.org/10.1063/1.109201
Abstract
X‐ray photoelectron spectroscopy (XPS) and E‐polarization‐dependent S K‐edge x‐ray absorption near‐edge structure (XANES) are used to characterize the chemical structure and site location of S on the (NH4)2S‐treated GaAs (100) surface. XPS studies show that S forms chemical bonds with both Ga and As on surfaces treated only with (NH4)2S. After receiving a sufficient water rinse, only Ga—S bonds remain on the surface. Photon E polarization‐dependent XANES studies show that S is bridge bonded to Ga in the [011] azimuth.Keywords
This publication has 11 references indexed in Scilit:
- Structure of S-passivated InP(100)-(1×1) surfaceApplied Physics Letters, 1992
- Electrochemical sulfur passivation of GaAsApplied Physics Letters, 1992
- Improvements in electrostatic discharge performance of InGaAsP semiconductor lasers by facet passivationIEEE Transactions on Electron Devices, 1992
- Passivation of GaAs(001) surfaces by chalcogen atoms (S, Se and Te)Surface Science, 1991
- Sulfur bonding to GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S-treated GaAs (100) surfacesApplied Physics Letters, 1989
- UV photoemission study of sulfide passivated GaAs surfacesSolid State Communications, 1989
- Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bondsApplied Physics Letters, 1989
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- Unpinning of the Fermi level on GaAs by flowing waterApplied Physics Letters, 1987