Characterization of the metal-semiconductor interface by ballistic electron emission microscopy
- 1 January 1994
- journal article
- Published by EDP Sciences in Microscopy Microanalysis Microstructures
- Vol. 5 (1) , 31-40
- https://doi.org/10.1051/mmm:019940050103100
Abstract
Microscopy Microanalysis Microstructures, a publication of the Société Française des MicroscopiesKeywords
This publication has 7 references indexed in Scilit:
- A stage for submicron displacements using electromagnetic coils and its application to scanning tunneling microscopyReview of Scientific Instruments, 1991
- Direct spectroscopy of electron and hole scatteringPhysical Review Letters, 1990
- Observation of Interface Band Structure by Ballistic-Electron-Emission MicroscopyPhysical Review Letters, 1988
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Tunneling through a controllable vacuum gapApplied Physics Letters, 1982
- Catalytic action of gold atoms on the oxidation of Si(111) surfacesSurface Science, 1981
- Range of Excited Electrons in MetalsPhysical Review B, 1962