Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer
- 1 July 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 369 (1-2) , 84-87
- https://doi.org/10.1016/s0040-6090(00)00840-3
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Intraband absorption in Ge/Si self-assembled quantum dotsApplied Physics Letters, 1999
- Intersubband absorption in boron-doped multiple Ge quantum dotsApplied Physics Letters, 1999
- Formation of carbon-induced germanium dotsApplied Physics Letters, 1997
- Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressuresJournal of Applied Physics, 1997
- Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)Applied Physics Letters, 1995
- Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopyApplied Physics Letters, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Strain compensation by Ge in B-doped silicon epitaxial filmsJournal of Applied Physics, 1992
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990