High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S) , 452-457
- https://doi.org/10.1143/jjap.32.452
Abstract
We report, for the first time, that ArF excimer laser annealing can improve silicon-nitride film properties. It is shown that the 15-nm-thick top region of the laser preannealed film had a lower hydrogen content and a much lower etching rate than the as-deposited film. The laser preannealed film is very useful as the gate insulator of high-performance bottom-gate thin-film transistors fabricated with the laser-recrystallized poly-Si film. The field-effect mobility of electrons was as high as 200 cm2/V·s, while the mobility was as low as 40 cm2/V·s without preannealing the silicon-nitride film.Keywords
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