High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3704-3709
- https://doi.org/10.1143/jjap.30.3704
Abstract
High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogenation based on hydrogen-radical annealing improves the TFT characteristics drastically. The field-effect mobilities exceeded 220 cm2/Vs for electrons and 140 cm2/Vs for holes, respectively.Keywords
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