Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2358
Abstract
The optimum condition has been investigated for chemical vapor deposition (CVD) of amorphous-silicon (a-Si) films to form high-performance a-Si thin-film transistors (TFTs) by a fully plasma-free process. It was found that hydrogen annealings improve the TFT characteristics a great deal and that there is an optimum deposition temperature and gas flow rate. The maximum field-effect mobility of electrons and on/off current-ratio were more than 0.8 cm2V-1s-1 and 106, respectively.Keywords
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