Characterization of Distributed-Threshold-Voltage Transistors with Amorphous-Silicon

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Abstract
Experimental characteristics have been presented for an `original' distributed-threshold-voltage thin-film transistor that features a reduced hole current and a very low minimum off-current, even at elevated temperatures. These properties are the result of an engineered change in the sheet conductivity along the channel which is characterized by a distribution in threshold voltage. This distribution is controlled in this paper by using a resistive gate and an offset voltage applied between both ends of the gate. The device characteristics are studied as a function of this offset voltage. The results show good agreement with theory for moderate gate voltage.