DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- 1 May 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (5A) , L349
- https://doi.org/10.1143/jjap.25.l349
Abstract
The behavior of a Si donor in selectively doped AlAs/GaAs superlattices(SLs) grown by MBE was investigated. It was found that Si atoms doped within ± monolayer from the AlAs/GaAs interfaces of the SL act as deep centers similar to the so-called DX center observed in mixed AlGaAs, while those confined in GaAs layers act as shallow centers. The fact led us to model the DX center as a Si donor having both Al and Ga at the second nearest-neighbor sites. The model consistently explains the DX center characteristics in mixed AlGaAs.Keywords
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