Effect of a thin transition layer at a Si-SiO2 interface on electron mobility and energy levels
- 31 January 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 21 (2) , 163-166
- https://doi.org/10.1016/0038-1098(77)90674-3
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- Field dependent internal photoemission probe of the electronic structure of the Si–SiO2 interfaceJournal of Vacuum Science and Technology, 1976
- Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide filmsJournal of Vacuum Science and Technology, 1976
- Low-energy ion-scattering spectrometry (ISS) of the SiO2/Si interfaceApplied Physics Letters, 1975
- X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on siliconChemical Physics Letters, 1975
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975
- Carrier concentration in the inversion layer of a MOS field effect transistorSolid-State Electronics, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Optical Absorption Due to Space-Charge-Induced Localized StatesPhysical Review B, 1967
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965