Highly controllable pseudoline electron-beam recrystallization of silicon on insulator
- 15 April 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (8) , 2971-2976
- https://doi.org/10.1063/1.336911
Abstract
A new electron-beam annealing technique, an amplitude modulated pseudoline electron beam, has been proposed for recrystallization of large-area silicon layers on insulating materials (SOI). The technique utilizes an amplitude modulated sinusoidal wave for high-frequency beam oscillation. Through computer simulation of the temperature distribution for the sample surface, precise control of the position probability density profile of the line beam proved to be essential in realizing wide and uniform annealing. An optimum oscillation waveform was determined from the simulation. A large-area SOI, 4 mm ⧠, was successfully recrystallized.This publication has 11 references indexed in Scilit:
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