Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs

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Abstract
Studies have been carried out on Si layers deposited on (100) Si substrates by plasma CVD, and on heterojunction devices fabricated with the layers. These Si layers vary from microcrystalline to epitaxial structures depending on substrate surface cleaning and deposition temperature conditions. The characteristics of Si HBTs using these layers as emitters depend greatly on the structures of the layers. Very thin interfacial oxides formed by RCA cleaning are effective in growing homogeneous microcrystalline emitters. Hetero-junction effects exemplified by high current gains at room and low temperatures demonstrated the usefulness of the microcrystalline emitters for HBTs and future BiCMOS technology.