Single monolayer well size fluctuations in the luminescence of GaAs-GaAlAs superlattices
- 31 December 1985
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 1 (3) , 205-208
- https://doi.org/10.1016/0749-6036(85)90004-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Direct Observation of Lattice Arrangement in MBE Grown GaAs–AlGaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983
- Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron SeparationJapanese Journal of Applied Physics, 1981
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977
- X-ray diffraction study of a one-dimensional GaAs–AlAs superlatticeJournal of Applied Crystallography, 1977