1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions
- 12 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (15) , 2230-2232
- https://doi.org/10.1063/1.123810
Abstract
Improvement of 1.4× in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active layer to ⩽2000 Å and increasing the internal quantum efficiency by using multiple thin (⩽500 Å) active layers. The maximum luminous efficiency achieved is 73.7 lm/W at λp∼615 nm and the maximum external quantum efficiency is 32.0% at λp∼632 nm.This publication has 7 references indexed in Scilit:
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