Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates
- 20 December 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 173 (1-2) , 377-380
- https://doi.org/10.1016/0921-5093(93)90248-d
Abstract
No abstract availableKeywords
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