Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si2H6 and Annealing
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11A) , L2105
- https://doi.org/10.1143/jjap.29.l2105
Abstract
Polycrystalline silicon films on SiO2 are formed by Low Pressure Chemical Vapor Deposition from disilane at 450°C and subsequent annealing at 600°C. Homogeneity performances of the deposition are given, which compares with those of Si deposition from SiH4. The structure of the polysilicon material obtained after annealing is shown. The resulting grain size is much larger than the one that could be obtained by Si deposition from SiH4 and annealing. An optical evaluation of the film is given, confirming the potential of Si2H6 for the fabrication of high field effect mobility thin film transistors.Keywords
This publication has 7 references indexed in Scilit:
- Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1989
- Crystallization of LPCVD Silicon Films by Low Temperature AnnealingJournal of the Electrochemical Society, 1989
- Polycrystalline Silicon Film Formation at Low Temperature Using a Microcrystalline Silicon FilmJapanese Journal of Applied Physics, 1989
- Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz SubstratesJapanese Journal of Applied Physics, 1988
- Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1988
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)Japanese Journal of Applied Physics, 1986
- Hydrogenated Amorphous Silicon Produced by Pyrolysis of Disilane in a Hot Wall ReactorJapanese Journal of Applied Physics, 1984