Hydrogenated Amorphous Silicon Produced by Pyrolysis of Disilane in a Hot Wall Reactor
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3A) , L129-131
- https://doi.org/10.1143/jjap.23.l129
Abstract
Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been investigated as a function of substrate temperature using a hot wall type reactor. The high growth rate of more than 8 A/sec has been achieved at a substrate temperature of 450°C and the hydrogen content is about 9 at.%. The optical bandgap never exceeds 1.6 eV even for a hydrogen content of 18 at.% and the spin density is as low as ∼1016 cm-3.Keywords
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