Beam equivalent pressure measurements in chemical beam epitaxy
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 265-269
- https://doi.org/10.1016/0022-0248(93)90619-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursorsJournal of Crystal Growth, 1992
- RHEED studies of MOMBE growth using TMGa or TEGa with As2Journal of Crystal Growth, 1992
- An integrated safety system for CBEJournal of Crystal Growth, 1990
- Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compoundsJournal of Applied Physics, 1982
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977