Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices
- 24 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 203 (3) , 362-370
- https://doi.org/10.1016/s0022-0248(99)00099-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigationsApplied Physics Letters, 1997
- CdSe/ZnSe Quantum Dot Structures: Structural and Optical InvestigationsPhysica Status Solidi (b), 1997
- Self-Organized Growth of II-VI Wide Bandgap Quantum Dot StructuresPhysica Status Solidi (b), 1997
- Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]Applied Physics Letters, 1997
- Naturally formed ZnCdSe quantum dots on ZnSe (110) surfacesApplied Physics Letters, 1997
- Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxyApplied Physics Letters, 1996
- High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structuresJournal of Crystal Growth, 1995
- Characterization of alloy formation at the ZnSe/CdSe quantum-well interface by photoluminescence spectroscopyJournal of Crystal Growth, 1994
- Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substratesJournal of Applied Physics, 1992
- The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPEJournal of Crystal Growth, 1990