Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates
- 1 December 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (11) , 5233-5239
- https://doi.org/10.1063/1.352005
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-xJapanese Journal of Applied Physics, 1991
- Growth of Short-Period ZnSe-ZnSxSe1-x Strained-Layer Superlattices by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE SystemJapanese Journal of Applied Physics, 1990
- Effects of (NH4)2Sx-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBEJapanese Journal of Applied Physics, 1990
- Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxyPhysical Review B, 1990
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1990
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Effect of temperature on exciton trapping on interface defects in GaAs quantum wellsPhysical Review B, 1985
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981