Diffusion of Zn across p-n junctions in Ga0.47In0.53As
- 1 May 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (5) , 643-646
- https://doi.org/10.1088/0268-1242/8/5/005
Abstract
The authors report evidence obtained by secondary-ion mass spectroscopy (SIMS) and electrochemical profiling of the saturation of Zn doping and of the diffusion of Zn across p-n junctions in Ga0.47In0.53As grown in InP by organometallic vapour-phase epitaxy (OMVPE). The results are consistent with the 'kick-out' mechanism, in the context of which the authors propose that the diffusing species is probably a neutral Zn interstitial, IZn0. Accumulation of Zn at the interface with a highly n-doped layer indicates the possible formation of Zn-donor complexes.Keywords
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