Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases
- 28 February 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 27 (1-4) , 449-452
- https://doi.org/10.1016/0167-9317(94)00143-i
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Reactive ion etching mechanism study on Si/GexSi1−xMicroelectronic Engineering, 1994
- Highly anisotropic selective reactive ion etching of deep trenches in siliconMicroelectronic Engineering, 1994
- Deep three-dimensional microstructure fabrication for infrared binary opticsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Anisotropic etching of submicron silicon features in a 23 cm diameter microwave multicusp electron-cyclotron-resonance plasma reactorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas MixturesJournal of the Electrochemical Society, 1991
- Effects of RF Bias on Remote Microwave Plasma Assisted Etching of Silicon in SF 6Journal of the Electrochemical Society, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- High‐Rate Anisotropic Etching of Silicon by Remote Microwave Plasma in Sulfur‐HexafluorideJournal of the Electrochemical Society, 1990
- The Effect of Metal Masks on the Plasma Etch Rate of SiliconJournal of the Electrochemical Society, 1989
- Low-temperature reactive ion etching and microwave plasma etching of siliconApplied Physics Letters, 1988