Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12R)
- https://doi.org/10.1143/jjap.37.6655
Abstract
We have demonstrated anisotropic and smooth etching of InP by an inductively coupled plasma (ICP) method using SiCl4/Ar and processing at a high substrate temperature. We measured the etching rate by varying the substrate temperature, process pressure and rf power. Vertical micropillars of InP with smooth etched surfaces were obtained under relatively small dc biases of lower than -50 V. The ICP etching is considered to be useful for low-damage microfabrication of InP systems by optimizing the etching condition.Keywords
This publication has 6 references indexed in Scilit:
- Fabrication of Two-Dimensional InP Photonic Band-Gap Crystals by Reactive Ion Etching with Inductively Coupled PlasmaJapanese Journal of Applied Physics, 1997
- High-density plasma etching of compound semiconductorsJournal of Vacuum Science & Technology A, 1997
- Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4Journal of Vacuum Science & Technology A, 1997
- Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixtureJournal of Vacuum Science & Technology A, 1996
- Characterization of chemically assisted ion beam etching of InPJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound SemiconductorJapanese Journal of Applied Physics, 1992