The distribution of gold and oxygen in solid phase epitaxy Si films
- 1 June 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (11) , 598-600
- https://doi.org/10.1063/1.89251
Abstract
Silicon films deposited on Au/Si layers at deposition temperatures at or above 380 °C are single crystal, while Si films deposited on Si with a native oxide are amorphous up to 500 °C and ordered polycrystalline above 500 °C. The initial gold (300 Å) deposit migrates to the growing epitaxy surface where it nucleates in clusters. RBS and AES analysis indicated that 0.1 at.% gold remains distributed throughout the epitaxial film.Keywords
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