Solid phase epitaxial studies using vacuum deposition on heated silicon substrates
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (7) , 365-367
- https://doi.org/10.1063/1.88782
Abstract
Thin epitaxial films of silicon have been grown at 600 °C on (111) silicon surfaces by vacuum deposition. The silicon deposition and growth was performed subsequent to a hot deposition (125 °C) of 300‐Å gold film on the substrate.Keywords
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