Nitridation of the stacked poly-Si gate to suppress the boron penetration in pMOS
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (6) , 248-249
- https://doi.org/10.1109/55.790724
Abstract
Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF/sub 2//sup +/-implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.Keywords
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