MOS characteristics of ultrathin NO-grown oxynitrides
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (10) , 421-423
- https://doi.org/10.1109/55.320988
Abstract
In this paper, we report for the first time, the growth of high quality ultrathin oxynitrides formed by nitridation of SiO/sub 2/ in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This process is highly self-limited compared with N/sub 2/O oxidation of silicon. A significant improvement in the interface endurance and charge trapping properties, under constant current stress, compared to pure O/sub 2/-grown and N/sub 2/O-grown oxides is observed. The NO growth process will have a great impact on future CMOS and EEPROM technologies.Keywords
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