Hydride vapour phase epitaxy for nanostructures
- 27 February 1998
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 51 (1-3) , 238-241
- https://doi.org/10.1016/s0921-5107(97)00268-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Maskless selective growth of InGaAs/InP quantum wires on (100) GaAsApplied Physics Letters, 1997
- Demonstration of quantized conductance in deeply reactive ion etched In0.53Ga0.47As/InP electron waveguides with in-plane gatesApplied Physics Letters, 1997
- Temporally resolved regrowth of InPJournal of Crystal Growth, 1995
- Maskless InP wire formation on planar GaAs substratesApplied Physics Letters, 1994
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Optical analysis of wet chemically etched InGaAs/InP wiresMicroelectronic Engineering, 1992