Temporally resolved regrowth of InP
- 1 July 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 152 (3) , 105-114
- https://doi.org/10.1016/0022-0248(95)00116-6
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Fabrication of 1.5 μm optically pumped vertical-cavity surface-emitting lasersMaterials Science and Engineering: B, 1994
- Morphological modifications during selective growth of InP around cylindrical and parallelepiped mesasMaterials Science and Engineering: B, 1994
- Orientation dependent growth behaviour during hydride VPE regrowth of InP:Fe around reactive ion etched mesasJournal of Electronic Materials, 1991
- An investigation on hydride VPE growth and properties of semi-insulating InP:FeJournal of Electronic Materials, 1990
- Selective Epitaxy of III–V Compounds by Low‐Temperature Hydride VPEJournal of the Electrochemical Society, 1990
- Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase EpitaxyJournal of the Electrochemical Society, 1990
- Orientation dependentp-type conversion of Fe:InP in hydride VPE regrown EMBH lasersJournal of Electronic Materials, 1989
- MOVPE studies for a monolithically integrated DH laser/HBT laser driverJournal of Crystal Growth, 1988
- Anisotropic lateral growth in GaAs MOCVD layers on (001) substratesJournal of Crystal Growth, 1987
- Selective growth of InP buried structure by chloride vapor phase epitaxyApplied Physics Letters, 1986