Orientation dependent growth behaviour during hydride VPE regrowth of InP:Fe around reactive ion etched mesas
- 1 August 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (8) , 523-528
- https://doi.org/10.1007/bf02666012
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase EpitaxyJournal of the Electrochemical Society, 1990
- 1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogenApplied Physics Letters, 1990
- Orientation dependentp-type conversion of Fe:InP in hydride VPE regrown EMBH lasersJournal of Electronic Materials, 1989
- Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substratesJournal of Crystal Growth, 1989
- High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth stepsElectronics Letters, 1988
- High-speed distributed feedback lasers grown by hydride epitaxyApplied Physics Letters, 1988
- Planar selective growth of InP by MOVPEJournal of Crystal Growth, 1988
- Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Selective growth of InP buried structure by chloride vapor phase epitaxyApplied Physics Letters, 1986
- High-speed analog and digital modulation of 1.51-μm wavelength, three-channel buried crescent InGaAsP lasersApplied Physics Letters, 1984