Properties of MOS structures after B+ ion bombardment
- 16 November 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 38 (1) , 131-138
- https://doi.org/10.1002/pssa.2210380115
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Implant dose profile dependence of electrical characteristics of ion-implanted MOS transistorsJournal of Applied Physics, 1974
- Annealing characteristics of ion-implanted p-channel MOS transistorsJournal of Applied Physics, 1974
- Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniquesSolid-State Electronics, 1974
- Investigation of the fast surface state spectrum of MIS structures by a differentialC–U methodPhysica Status Solidi (a), 1972
- Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge releaseElectronics Letters, 1970
- Trapping levels in silicon nitrideElectronics Letters, 1968
- MOS field effect transistors formed by gate masked ion implantationIEEE Transactions on Electron Devices, 1968
- Evidence for space charge polarization in pure KC1 at low temperaturesJournal of Physics and Chemistry of Solids, 1965
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961
- A Note on the Analysis of First-Order Glow CurvesJournal of Applied Physics, 1953