Enhanced elimination of implantation damage upon exceeding the solid solubility
- 15 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (10) , 4114-4117
- https://doi.org/10.1063/1.339126
Abstract
Implantation of silicon wafers with Ga and P, under specific conditions, results in enhanced category-II (end of range) dislocation loop elimination after short thermal cycling. Comparison of these results with transmission electron microscopy studies of Si-, Ge-, As-, Al-, and Sb-implanted samples indicate that the enhanced elimination process occurs only when the peak of the impurity concentration exceeds the solid solubility of the impurity in silicon at the annealing temperature and the resulting precipitates are dissolving. The activation energy for enhanced elimination of these extrinsic catetory-II dislocation loops is shown to be 5±0.5 eV. It is proposed that vacancy emission by the dissolving precipitates is responsible for the enhanced elimination.This publication has 12 references indexed in Scilit:
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