Investigation of Point Defects in Si by Impurity Diffusion
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si WafersJapanese Journal of Applied Physics, 1982
- Effect of Back‐Side Oxidation on B and P Diffusion in Si Directly Masked with Si3 N 4 FilmsJournal of the Electrochemical Society, 1982
- The Range of Diffusion Enhancement of B and P in Si during Thermal OxidationJapanese Journal of Applied Physics, 1982
- Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si3N4 FilmsJapanese Journal of Applied Physics, 1981
- On the role of self-interstitials in impurity diffusion in siliconJournal of Applied Physics, 1980
- Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) SiliconJournal of the Electrochemical Society, 1980
- Boron Diffusion in Silicon‐Concentration and Orientation Dependence, Background Effects, and Profile EstimationJournal of the Electrochemical Society, 1975
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961