Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (6) , 274-276
- https://doi.org/10.1109/55.31744
Abstract
The collector-emitter offset voltages of InAlAs/InGaAs heterojunction bipolar transistors grown by molecular-beam epitaxy are discussed. Both the difference between emitter and collector areas and electrical asymmetry between emitter and collector junctions in these mesa-isolated transistors account for the offset voltages observed. Devices exhibited offset voltages in the range of 50-300 mV, depending on the structures and device sizes. Several electrical and geometrical factors affecting the offset voltage are discussed in detail.Keywords
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