P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (1) , 487-491
- https://doi.org/10.1109/tns.1985.4336879
Abstract
A new device concept for CdTe gamma ray detectors has been demonstrated using p+(HgCdTe)-n(CdTe)-n+ (HgCdTe) diode structures. Both P+ and n+ Hg0.25Cd0.75Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm2 were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co57 at room temperature.Keywords
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