Dependence of atomic layer-deposited Al2O3 films characteristics on growth temperature and Al precursors of Al(CH3)3 and AlCl3
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 15 (6) , 2993-2997
- https://doi.org/10.1116/1.580895
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Al3O3 thin film growth on Si(100) using binary reaction sequence chemistryThin Solid Films, 1997
- Properties of Ta2 O 5‐Based Dielectric Nanolaminates Deposited by Atomic Layer EpitaxyJournal of the Electrochemical Society, 1997
- Surface reactions in Al2O3 growth from trimethylaluminium and water by atomic layer epitaxyApplied Surface Science, 1996
- Leakage Current Mechanism of Amorphous and Polycrystalline Ta2 O 5 Films Grown by Chemical Vapor DepositionJournal of the Electrochemical Society, 1996
- Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequenceSurface Science, 1995
- Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequenceSurface Science, 1995
- Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer depositionJournal of Electronic Materials, 1993
- Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processesMaterials Chemistry and Physics, 1991
- Sequential surface chemical reaction limited growth of high quality Al2O3 dielectricsApplied Physics Letters, 1989