Stimulated photoluminescence in indium selenide

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Abstract
The stimulated emission from the layered indirect-gap semiconductor InSe under high values of dye laser excitation intensity has been investigated in the temperature range 20-300 K. The emission intensity dependences on the laser intensity, on the excited length of the sample, and on the temperature are reported; optical gain spectra and quantum efficiency measurements have been also performed. We have evidence of four light amplification processes, in the near-infrared region, associated either with cooperative excitonic interaction or with electron-hole plasma recombination.