Many-body effects in the emission spectrum of ZnTe under high-intensity photoexcitation
- 15 April 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 19 (8) , 4149-4153
- https://doi.org/10.1103/physrevb.19.4149
Abstract
At high photoexcitation levels the free-exciton emission band in ZnTe is characterized by a strong distortion which increases with the excitation intensity. The two main features are a peak shift towards lower energies and a broadening of the low-energy side of the emission band. These effects have been studied as a function of the pump wavelength by using a high-intensity tunable dye laser. The emission-peak shift is interpreted in terms of band-gap shrinkage and electron-phonon interaction. The broadening is attributed to the nonequilibrium distribution of LO phonons (hot phonons) and electrons (hot electrons).Keywords
This publication has 10 references indexed in Scilit:
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978
- Study of band-gap shrinkage in cinnabar (α-HgS) by cathodoluminescence under very strong excitationPhysica Status Solidi (a), 1977
- Excitonic emission in highly excited lead iodineSolid State Communications, 1976
- Pump wavelength dependence of hot electron temperature in GaAsSolid State Communications, 1976
- Many-body and hot-phonon effects in the radiative emission spectrum of CdS under high excitation intensitiesPhysical Review B, 1975
- Luminescence by exciton‐exciton collision in GaSePhysica Status Solidi (b), 1975
- Photoexcited hot electrons and excitons in CdSe at 2 °KPhysical Review B, 1974
- Dependence of hot carriers temperature on lattice temperature in CdSSolid State Communications, 1973
- Many-body effects in the radiative emission spectrum of semiconductorsSolid State Communications, 1973
- Band gap reduction in CdS due to high density of photo-injected carriersSolid State Communications, 1972