Magnetoconductance Investigations of AlxGa1-xAs/GaAs Heterojunction FET in Strong Magnetic Fields
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6) , L447
- https://doi.org/10.1143/jjap.20.l447
Abstract
In strong magnetic fields, the magnetoconductance of an electron gas formed in an Al x Ga1-x As/GaAs heterojunction interface has been studied. It has been found that the localization effect of the electron gas in the interface at tails of Landau levels is not so remarkable at the range between the spin-split levels of the first Landau level compared with that between the first and second Landau levels, and an abnormally large effective g-value has been observed. Several differences between phenomena in Si-MOS FET and those in Al x Ga1-x As/GaAs heterojunction FET are discussed.Keywords
This publication has 6 references indexed in Scilit:
- Simultaneous Recording of Two-Wavelength Interferometer Outputs of an Atmospheric Impulse Breakdown ProcessJapanese Journal of Applied Physics, 1981
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAsApplied Physics A, 1978
- Evidence for Anderson localisation in Landau level tails from the analysis of two-dimensional Shubnikov—de Haas conductivity minimaSolid State Communications, 1977
- Anderson localization in a two dimensional electron system under strong magnetic fieldsSolid State Communications, 1977
- Solution of the Field Problem of the Germanium GyratorJournal of Applied Physics, 1954