High-quality InAlAs grown by organometallic vapor phase epitaxy
- 16 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (20) , 1637-1639
- https://doi.org/10.1063/1.98580
Abstract
High-quality InAlAs with excellent photoluminescence and low electron concentrations has been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to InP, electron concentrations as low as 7×1015 cm−3 and mobilities as high as 4472 cm2/V s at 300 K have been achieved. These values are comparable to results measured on material grown by liquid phase epitaxy and molecular beam epitaxy and exceed results for previously published OMVPE grown material. The variation of the structural, optical, and electrical properties of the InAlAs with lattice mismatch is reported.Keywords
This publication has 7 references indexed in Scilit:
- Summary Abstract: Material properties and clustering in molecular‐beam epitaxial In0.52Al0.48As and In1−x−yGaxAlyAsJournal of Vacuum Science & Technology B, 1987
- Photoluminescence characterization of single heterojunction quantum well structuresApplied Physics Letters, 1987
- The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984
- Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InPJournal of Applied Physics, 1983
- Electrical properties of undoped and Si-doped Al0.48In0.52As grown by liquid phase epitaxyApplied Physics Letters, 1983
- Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAsJapanese Journal of Applied Physics, 1981
- A study of alloy scattering in Ga1−xAlxAsJournal of Applied Physics, 1980