MOS transistor reliability under analog operation
- 1 August 2000
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (8-10) , 1545-1554
- https://doi.org/10.1016/s0026-2714(00)00189-x
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998
- Positive bias temperature instability in MOSFETsIEEE Transactions on Electron Devices, 1998
- SILC-related effects in flash E/sup 2/PROM's-Part I: A quantitative model for steady-state SILCIEEE Transactions on Electron Devices, 1998
- Hot-carrier degradation of p-MOSFET's under analog operationIEEE Transactions on Electron Devices, 1997
- Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate OxidesJapanese Journal of Applied Physics, 1996
- The impact of NMOSFET hot-carrier degradation on CMOS analog subcircuit performanceIEEE Journal of Solid-State Circuits, 1995
- Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-interfacePhysical Review B, 1995
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Negative bias stress of MOS devices at high electric fields and degradation of MNOS devicesJournal of Applied Physics, 1977