MOSFET reverse short channel effect due to silicon interstitial capture in gate oxide
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 307-310
- https://doi.org/10.1109/iedm.1993.347346
Abstract
We present a new mechanism for the anomalous threshold voltage roll-off behavior of submicron MOSFETs, commonly referred to as reverse short channel effect (RSCE). We assume in our model that interstitials injected into the gate oxide give rise to a position dependent charge distribution along the Si-SiO/sub 2/-interface. Simulations based on this model are in good agreement with measurements of the RSCE and its independence of substrate bias which is observed for MOSFETs with nearly flat channel profiles.Keywords
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