Highly localized donor states in InSb and their pressure dependence
- 1 February 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 115 (2) , 359-367
- https://doi.org/10.1002/pssb.2221150205
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Effect of Hydrostatic Pressure on the Band Structure of InSb A Pseudopotential CalculationPhysica Status Solidi (b), 1982
- High-Pressure and Low-Temperature PhysicsPublished by Springer Nature ,1978
- Electronic impurity levels in semiconductorsReports on Progress in Physics, 1974
- Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inPhysical Review B, 1972
- Electron scattering and transport phenomena in n-InSbJournal of Physics and Chemistry of Solids, 1971
- Low-Temperature Transport Effects in-Type GaSb at High Magnetic FieldsPhysical Review B, 1967